Samsung M378B5273CH0-CH9 4GB vs Heoriady HX2666CX15D4/4G 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 77

左右 52% 更低的延时
更快的写入速度，GB/s

8.4 7.6

测试中的平均数值

Heoriady HX2666CX15D4/4G 4GB

需要考虑的原因
Heoriady HX2666CX15D4/4G 4GB

报告一个错误

更快的读取速度，GB/s

14.7 13.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Heoriady HX2666CX15D4/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 77
读取速度，GB/s

13.2 14.7
写入速度，GB/s

8.4 7.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 1688

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMK16GX4M2E3200C16 8GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

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Kingston SNY1600S11-4G-EDEG 4GB

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Crucial Technology CT8G4DFD8213.C16FAR2 8GB

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Micron Technology 16HTF25664AY-800J1 2GB

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Micron Technology 16HTF25664AY-800G1 2GB

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Crucial Technology CT102464BA160B.M16 8GB

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Crucial Technology CT8G4SFD824A.M16FB 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Ramaxel Technology RMUA5200ME78HAF-3200 8GB

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Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F4-3600C16-16GTZN 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Samsung M393B1G70BH0-YK0 8GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Kingston KHX1600C10D3/8G 8GB

Kingston KHX1600C10D3/8G 8GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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