Samsung M378B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 9.1

测试中的平均数值
更快的写入速度，GB/s

8.4 7.6

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 37
读取速度，GB/s

13.2 9.1
写入速度，GB/s

8.4 7.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT8G4D30AETA.K16FE 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Kingston 99U5663-001.A00G 16GB

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Essencore Limited KD48GU880-32A160X 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-4133C19-8GTZKWC 8GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

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PNY Electronics PNY 2GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

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Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB