Samsung M378B5273CH0-CH9 4GB vs Smart Modular SF4641G8CK8I8HLSBG 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Smart Modular SF4641G8CK8I8HLSBG 8GB

需要考虑的原因
Smart Modular SF4641G8CK8I8HLSBG 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 37

左右 -9% 更低的延时
更快的读取速度，GB/s

16.2 13.2

测试中的平均数值
更快的写入速度，GB/s

12.0 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 34
读取速度，GB/s

13.2 16.2
写入速度，GB/s

8.4 12.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX16GX4M2A2400C16 8GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

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Asgard VMA42UH-MEC1U2AJ2 16GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Kingston KY7N41-MIE 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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AMD R5S38G1601U2S 8GB

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Kingston KHX2800C14D4/4GX 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB