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Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB

Samsung M378B5273DH0-CH9 4GB vs Crucial Technology BLS16G4D26BFSC.16FD 16GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSC.16FD 16GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
Crucial Technology BLS16G4D26BFSC.16FD 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSC.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 41
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 34
  • 读取速度，GB/s
    13.3 left arrow 16.7
  • 写入速度，GB/s
    8.3 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 3284

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3200C15-8GTZKO 8GB
G Skill Intl F4-3200C15-8GTZKO 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK16GX4M4B3400C16 4GB
Corsair CMK16GX4M4B3400C16 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMV16GX4M1A2666C18 16GB
Corsair CMV16GX4M1A2666C18 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM