Samsung M378B5673EH1-CF8 2GB vs Dust Leopard DDR4-2400 C17 4GB 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 81

左右 65% 更低的延时
更快的写入速度，GB/s

7.5 6.4

测试中的平均数值

Dust Leopard DDR4-2400 C17 4GB 4GB

需要考虑的原因
Dust Leopard DDR4-2400 C17 4GB 4GB

报告一个错误

更快的读取速度，GB/s

13.3 12.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Dust Leopard DDR4-2400 C17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 81
读取速度，GB/s

12.7 13.3
写入速度，GB/s

7.5 6.4
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1456

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Corsair CMK32GX4M2K4133C19 16GB

Corsair CMK32GX4M2K4133C19 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB