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G Skill Intl F3-14900CL8-4GBXM 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
31
左右 -35% 更低的延时
更快的读取速度,GB/s
18.1
17.4
测试中的平均数值
更快的写入速度,GB/s
15.0
10.9
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
23
读取速度,GB/s
17.4
18.1
写入速度,GB/s
10.9
15.0
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2735
3317
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905663-021.A00G 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMK32GX4M4Z2933C16 8GB
AMD R538G1601U2S-UO 8GB
Kingston ACR24D4S7S8MB-8 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C16-8GISB 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMK64GX4M8X4000C19 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C18-32GTZR 32GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905744-023.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF51264AZ-2G1A2 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Transcend Information JM3200HLG-8G 8GB
A-DATA Technology DDR2 800G 2GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
Samsung M471B5273CH0-CH9 4GB
Heoriady HX2666CX15D4/4G 4GB
Kingston 99U5403-036.A00G 4GB
Essencore Limited IM44GU48N21-FFFHM 4GB
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