Samsung M378B5673EH1-CF8 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Micron Technology 8ATF1G64AZ-3G2R1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2R1 8GB

报告一个错误

更快的读取速度，GB/s

16.9 12.7

测试中的平均数值
更快的写入速度，GB/s

12.4 7.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.7 16.9
写入速度，GB/s

7.5 12.4
内存带宽，mbps

8500 no data

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 , 1.20000005, CAS Supported:
时序/时钟速度

7-7-7-20 / 1066 MHz no data
排名PassMark (越多越好)

1988 3043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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