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Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB

Samsung M378B5673EH1-CF8 2GB vs Patriot Memory (PDP Systems) PSD416G24002S 16GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
Patriot Memory (PDP Systems) PSD416G24002S 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G24002S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    12.7 left arrow 13.7
  • 写入速度，GB/s
    7.5 left arrow 10.6
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2422

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
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Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
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Kingston 9905713-004.A00G 4GB
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A-DATA Technology DQVE1908 512MB
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A-DATA Technology ADOVE1A0834E 1GB
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SK Hynix HMA82GR7MFR8N-UH 16GB
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Corsair VS1GB800D2 1GB
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Kingston HX421C14FB/4 4GB
内存RAM
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Kingston 2GB-DDR2 800Mhz 2GB
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Chun Well Technology Holding Limited CL18-22-22 D4-3600
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Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
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Smart Modular SF4641G8CK8I8HLSBG 8GB
内存RAM
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Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
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Kingston KF552C40-16 16GB
Kingston KHX2666C15S4/8G 8GB
Kingston KHX2666C15S4/8G 8GB
内存RAM
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Samsung M378B1G73EB0-CK0 8GB
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Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
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Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-2666C18-32GVK 32GB
G Skill Intl F4-2666C18-32GVK 32GB
内存RAM