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Kingston 99U5402-464.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB

Kingston 99U5402-464.A00LF 4GB vs Crucial Technology CT16G4DFD824A.C16FDR 16GB

总分
star star star star star
Kingston 99U5402-464.A00LF 4GB

Kingston 99U5402-464.A00LF 4GB

总分
star star star star star
Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

差异 规格 评论

差异

Kingston 99U5402-464.A00LF 4GB 需要考虑的原因
Kingston 99U5402-464.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 34
    左右 15% 更低的延时
Crucial Technology CT16G4DFD824A.C16FDR 16GB 需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FDR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 99U5402-464.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 34
  • 读取速度，GB/s
    12.2 left arrow 14.8
  • 写入速度，GB/s
    7.4 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2024 left arrow 2826

Kingston 99U5402-464.A00LF 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5402-464.A00LF 4GB
Kingston 99U5402-464.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GSXKB 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3333C16-16GVR 16GB
G Skill Intl F4-3333C16-16GVR 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F4-2400C17-4GFX 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston 9965640-016.A00G 32GB
Kingston 9965640-016.A00G 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM