Samsung M378B5673FH0-CH9 2GB vs Corsair CMWX8GF2666C16W4 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

更快的读取速度，GB/s

14.4 13.4

测试中的平均数值

Corsair CMWX8GF2666C16W4 8GB

需要考虑的原因
Corsair CMWX8GF2666C16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 35

左右 -35% 更低的延时
更快的写入速度，GB/s

9.9 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Corsair CMWX8GF2666C16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 26
读取速度，GB/s

14.4 13.4
写入速度，GB/s

9.5 9.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 2563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Samsung M3 78T2863EHS-CF7 1GB

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DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB