Samsung M378B5673FH0-CH9 2GB vs G Skill Intl F4-2133C15-4GVR 4GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

G Skill Intl F4-2133C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 -6% 更低的延时
更快的读取速度，GB/s

15 14.4

测试中的平均数值
更快的写入速度，GB/s

10.3 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-2133C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 33
读取速度，GB/s

14.4 15.0
写入速度，GB/s

9.5 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905670-012.A00G 8GB

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Kingston 9905403-500.A01LF 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3866C18-8GTZ 8GB

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Samsung M378B5673FH0-CH9 2GB

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G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

Samsung M378B5173BH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 9965600-011.A01G 16GB

Kingston 9965600-011.A01G 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9905624-033.A00G 8GB

Kingston 9905624-033.A00G 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB