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Samsung M378B5773CH0-CH9 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
比较
Samsung M378B5773CH0-CH9 2GB vs Essencore Limited KD4AGS88C-26N1900 16GB
总分
Samsung M378B5773CH0-CH9 2GB
总分
Essencore Limited KD4AGS88C-26N1900 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
需要考虑的原因
Essencore Limited KD4AGS88C-26N1900 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
39
左右 -8% 更低的延时
更快的读取速度,GB/s
15.8
12.8
测试中的平均数值
更快的写入速度,GB/s
13.2
7.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
36
读取速度,GB/s
12.8
15.8
写入速度,GB/s
7.4
13.2
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1770
3027
Samsung M378B5773CH0-CH9 2GB RAM的比较
Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Essencore Limited KD4AGS88C-26N1900 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramos Technology RMB4GB58BCA3-13HC 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9905744-076.A00G 16GB
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Corsair CMK32GX5M2B5600C36 16GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Samsung M378B5773CH0-CH9 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905734-063.A00G 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD16GX4M2B3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 99U5665-004.A00G 4GB
SK Hynix DDR2 800 2G 2GB
Corsair CMD8GX4M2B3600C18 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C16-8GVKBN 8GB
报告一个错误
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