Samsung M378B5773DH0-CH9 2GB vs Crucial Technology BL16G32C16S4B.M8FB1 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Crucial Technology BL16G32C16S4B.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 -34% 更低的延时
更快的读取速度，GB/s

17.2 11.7

测试中的平均数值
更快的写入速度，GB/s

14.2 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 29
读取速度，GB/s

11.7 17.2
写入速度，GB/s

7.2 14.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 3461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Gloway International (HK) STK4U2400D17081C 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9905458-017.A01LF 4GB

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Ramaxel Technology RMUA5110MH78HAF-2666 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMW128GX4M8X3600C18 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

SK Hynix HMA84GR7MFR4N-UH 32GB

SK Hynix HMA84GR7MFR4N-UH 32GB