Samsung M378B5773DH0-CH9 2GB vs Crucial Technology CT4G4DFS8266.M8FE 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 74

左右 47% 更低的延时

Crucial Technology CT4G4DFS8266.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.M8FE 4GB

报告一个错误

更快的读取速度，GB/s

15.4 11.7

测试中的平均数值
更快的写入速度，GB/s

8.0 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 74
读取速度，GB/s

11.7 15.4
写入速度，GB/s

7.2 8.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 1714

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Corsair CMK32GX4M2K4133C19 16GB

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Kingston 99U5584-004.A00LF 4GB

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Transcend Information JM3200HLE-32G 32GB

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SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Corsair CMWB8G1L3200K16W4 8GB

Corsair CMWB8G1L3200K16W4 8GB

Samsung M393A1G40DB0-CPB 8GB

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Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB