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Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
比较
Samsung M378B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
更快的读取速度,GB/s
11.7
9.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
38
39
左右 -3% 更低的延时
更快的写入速度,GB/s
8.3
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
38
读取速度,GB/s
11.7
9.4
写入速度,GB/s
7.2
8.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1749
2110
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1G43DB0-CPB 8GB
Kingston 9965698-001.A00G 16GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMW16GX4M2A2666C16 8GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMR16GX4M2F4000C19 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMD64GX4M4B3000C15 16GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905701-006.A00G 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Avant Technology W642GU42J5213N2 16GB
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KCRXJ6-HYJ 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KHX2666C16S4/16G 16GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
报告一个错误
×
Bug description
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