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Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
比较
Samsung M378B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
39
45
左右 13% 更低的延时
更快的读取速度,GB/s
11.7
6.9
测试中的平均数值
更快的写入速度,GB/s
7.2
6.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
45
读取速度,GB/s
11.7
6.9
写入速度,GB/s
7.2
6.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1749
1499
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
TwinMOS 8DPT5MK8-TATP 2GB
Mushkin 99[2/7/4]190F 4GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology 78.B1GQB.4010B 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Corsair CMSO4GX4M1A2133C15 4GB
Mushkin 991988 (996988) 4GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung M471A1K43DB1-CTD 8GB
AMD R538G1601U2S-UO 8GB
Kingston 9905734-063.A00G 32GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1K70DH0-CK0 8GB
Hexon Technology Pte Ltd HEXON 1GB
Golden Empire CL16-18-18 D4-3400 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905701-022.A00G 16GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
报告一个错误
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Bug description
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