Samsung M378B5773DH0-CH9 2GB vs Kingston 9905713-001.A00G 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 64

左右 39% 更低的延时
更快的写入速度，GB/s

7.2 6.6

测试中的平均数值

Kingston 9905713-001.A00G 4GB

需要考虑的原因
Kingston 9905713-001.A00G 4GB

报告一个错误

更快的读取速度，GB/s

16.8 11.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingston 9905713-001.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 64
读取速度，GB/s

11.7 16.8
写入速度，GB/s

7.2 6.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 1808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G30C15U4B.M16FE1 16GB

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Kingston KVR800D2N6/2G 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

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Corsair CMR16GX4M2F4000C19 8GB

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Team Group Inc. Vulcan-1600 4GB

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Kingston KCRXJ6-HYJ 16GB

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Corsair CMX4GX3M2A1600C9 2GB

Corsair CMK32GX4M2D3600C18 16GB

Corsair CMK32GX4M2D3600C18 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Smart Modular SF464128CKHI6DFSEG 4GB

Smart Modular SF464128CKHI6DFSEG 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

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Samsung M471B5173QH0-YK0 4GB

Kingston HP32D4U8S8HC-8XR 8GB

Kingston HP32D4U8S8HC-8XR 8GB