Samsung M378B5773DH0-CH9 2GB vs Kingston ACR32D4S2S1ME-8 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 57

左右 32% 更低的延时

Kingston ACR32D4S2S1ME-8 8GB

需要考虑的原因
Kingston ACR32D4S2S1ME-8 8GB

报告一个错误

更快的读取速度，GB/s

15.1 11.7

测试中的平均数值
更快的写入速度，GB/s

10.3 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingston ACR32D4S2S1ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 57
读取速度，GB/s

11.7 15.1
写入速度，GB/s

7.2 10.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1749 2276

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2666C18-4GRS 4GB

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Kingston ACR512X64D3S13C9G 4GB

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AMD R534G1601U1S-UO 4GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Crucial Technology CT8G4DFS8213.C8FDR1 8GB

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G Skill Intl F4-4000C16-16GVK 16GB

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PNY Electronics PNY 2GB

Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

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Kingston HX426C16FB2/8-SP 8GB

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G Skill Intl F4-2666C15-4GVK 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston 9905678-041.A00G 4GB

Kingston 9905678-041.A00G 4GB