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Samsung M378B5773DH0-CH9 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
比较
Samsung M378B5773DH0-CH9 2GB vs Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
39
左右 -18% 更低的延时
更快的读取速度,GB/s
17.8
11.7
测试中的平均数值
更快的写入速度,GB/s
12.5
7.2
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
33
读取速度,GB/s
11.7
17.8
写入速度,GB/s
7.2
12.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1749
3285
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-1333C9-4GIS 4GB
A-DATA Technology DDR4 4133 2OZ 8GB
Kingston 9965662-016.A00G 16GB
Corsair CMD8GX4M2B4000C19 4GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Samsung M378A5244CB0-CVF 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK16GX4M2D3600C16 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Corsair CMD8GX3M2A2933C12 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Kingston KP4T2F-PSB 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Kingston 9905701-131.A00G 16GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK16GX4M2C3600C20 8GB
Kingston 9905471-002.A00LF 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
报告一个错误
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Bug description
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