Samsung M378B5773DH0-CH9 2GB vs Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 74

左右 47% 更低的延时

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

报告一个错误

更快的读取速度，GB/s

13.8 11.7

测试中的平均数值
更快的写入速度，GB/s

7.9 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 74
读取速度，GB/s

11.7 13.8
写入速度，GB/s

7.2 7.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 1825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Corsair CMT32GX4M2Z3600C18 16GB

Corsair CMT32GX4M2Z3600C18 16GB

Corsair CML8GX3M2A1600C9 4GB

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Kingston 9905403-090.A01LF 4GB

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Transcend Information JM3200HLB-8G 8GB

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