Samsung M378T5663QZ3-CF7 2GB vs AMD R7416G2133U2S 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 78

左右 28% 更低的延时
更快的读取速度，GB/s

4 13.5

测试中的平均数值

AMD R7416G2133U2S 16GB

需要考虑的原因
AMD R7416G2133U2S 16GB

报告一个错误

更快的写入速度，GB/s

6.7 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

AMD R7416G2133U2S 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 78
读取速度，GB/s

4,387.7 13.5
写入速度，GB/s

1,813.5 6.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 1594

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston 9905403-170.A00LF 2GB

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OCZ OCZ3P1333LV2G 2GB

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Corsair CMK128GX4M4D3600C18 32GB