Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-2800C15-8GVR 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

G Skill Intl F4-2800C15-8GVR 8GB

G Skill Intl F4-2800C15-8GVR 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值

G Skill Intl F4-2800C15-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 -107% 更低的延时
更快的写入速度，GB/s

13.5 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-2800C15-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 27
读取速度，GB/s

4,387.7 17.9
写入速度，GB/s

1,813.5 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 3396

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Team Group Inc. TEANGROUP-UD4-2400 8GB

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Smart Modular SH564128FH8N0QHSCG 4GB

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SK Hynix HMA41GU7AFR8N-TF 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

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