Samsung M378T5663QZ3-CF7 2GB vs Kingston 9905711-017.A00G 4GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.1

测试中的平均数值

Kingston 9905711-017.A00G 4GB

需要考虑的原因
Kingston 9905711-017.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 56

左右 -30% 更低的延时
更快的写入速度，GB/s

11.0 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Kingston 9905711-017.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 43
读取速度，GB/s

4,387.7 14.1
写入速度，GB/s

1,813.5 11.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 2260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 4JTF12864AZ-1G4D1 1GB

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Samsung M378B5673FH0-CH9 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

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SK Hynix HMA81GS6MFR8N-UH 8GB

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Crucial Technology BL32G32C16U4R.M16FB1 32GB

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Gloway International (HK) STKD4XMP2400-F 4GB

Samsung M471B5773DH0-CK0 2GB

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SK Hynix HMA851U6DJR6N-WM 4GB

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Kingston 9965525-140.A00LF 8GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB