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Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB

Micron Technology 4JTF12864AZ-1G4D1 1GB vs Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Micron Technology 4JTF12864AZ-1G4D1 1GB

Micron Technology 4JTF12864AZ-1G4D1 1GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

差异 规格 评论

差异

Micron Technology 4JTF12864AZ-1G4D1 1GB 需要考虑的原因
Micron Technology 4JTF12864AZ-1G4D1 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.6
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    13.8 left arrow 14.4
  • 写入速度，GB/s
    7.6 left arrow 9.5
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1809 left arrow 2321

Micron Technology 4JTF12864AZ-1G4D1 1GB RAM的比较

G Skill Intl F4-2400C16-4GFX 4GB

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 4JTF12864AZ-1G4D1 1GB
Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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