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Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB

Micron Technology 4JTF12864AZ-1G4D1 1GB vs Samsung M378B5673FH0-CH9 2GB

Overall score
star star star star star
Micron Technology 4JTF12864AZ-1G4D1 1GB

Micron Technology 4JTF12864AZ-1G4D1 1GB

Overall score
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Differences Specifications Comments

Differences

Micron Technology 4JTF12864AZ-1G4D1 1GB Reasons to consider
Micron Technology 4JTF12864AZ-1G4D1 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 35
    Around 26% lower latency
Samsung M378B5673FH0-CH9 2GB Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
  • Faster reading speed, GB/s
    14.4 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 7.6
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 4JTF12864AZ-1G4D1 1GB
Samsung M378B5673FH0-CH9 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 35
  • Read speed, GB/s
    13.8 left arrow 14.4
  • Write speed, GB/s
    7.6 left arrow 9.5
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1809 left arrow 2321

Micron Technology 4JTF12864AZ-1G4D1 1GB RAM comparisons

G Skill Intl F4-2400C16-4GFX 4GB

Samsung M378B5673FH0-CH9 2GB RAM comparisons

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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