Samsung M471B5773DH0-CK0 2GB vs SK Hynix HMA851U6DJR6N-WM 4GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

SK Hynix HMA851U6DJR6N-WM 4GB

需要考虑的原因
SK Hynix HMA851U6DJR6N-WM 4GB

报告一个错误

更快的读取速度，GB/s

16.3 12.2

测试中的平均数值
更快的写入速度，GB/s

12.2 7.8

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

SK Hynix HMA851U6DJR6N-WM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

12.2 16.3
写入速度，GB/s

7.8 12.2
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1763 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW64GX4M4K3600C18 16GB

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Essencore Limited IM44GU48N24-FFFHAB 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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AMD R748G2606U2S 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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A-DATA Technology DDR4 2800 8GB

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Mushkin 991586 2GB

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Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

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Kingston 9905701-010.A00G 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Hypertec G2RT-4AFT00 16GB

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Kingston 99U5428-046.A00LF 4GB

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Kingston 9905711-035.A00G 8GB

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Kingston KF2933C17S4/16G 16GB

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King Tiger Technology Tigo-2400MHz-4G 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB