Samsung M378T5663QZ3-CF7 2GB vs Kingston 9965600-027.A01G 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 10.8

测试中的平均数值

Kingston 9965600-027.A01G 16GB

需要考虑的原因
Kingston 9965600-027.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 56

左右 -65% 更低的延时
更快的写入速度，GB/s

8.5 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Kingston 9965600-027.A01G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 34
读取速度，GB/s

4,387.7 10.8
写入速度，GB/s

1,813.5 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M378B1G73EB0-CK0 8GB

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Kingston HP32D4U2S8ME-16 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Corsair CMK64GX4M4B3600C18 16GB

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Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-2800C16-8GRR 8GB

G Skill Intl F4-2800C16-8GRR 8GB

AMD R5316G1609U2K 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB