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Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A2G40EB1-CPB 16GB

Samsung M386B4G70DM0-CMA4 32GB vs Samsung M393A2G40EB1-CPB 16GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 56
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    9.7 left arrow 9.3
    测试中的平均数值
Samsung M393A2G40EB1-CPB 16GB 需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.7 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A2G40EB1-CPB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 56
  • 读取速度，GB/s
    9.7 left arrow 9.3
  • 写入速度，GB/s
    7.2 left arrow 7.7
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 2200

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Samsung M393A2G40EB1-CPB 16GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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Essencore Limited KD48GU880-32A160U 8GB
Essencore Limited KD48GU880-32A160U 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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内存RAM
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Kingston 9905584-016.A00LF 4GB
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Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
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Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
Kingston 99U5474-026.A00LF 4GB
Kingston 99U5474-026.A00LF 4GB
Corsair CM4X16GE2400C16S4 16GB
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内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Corsair CMT32GX4M2C3200C16 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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Corsair CMK32GX4M4D3600C18 8GB
内存RAM
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Kingston KVT8FP-HYC 4GB
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Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
内存RAM
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Samsung M3 78T2863QZS-CF7 1GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Transcend Information JM3200HLB-16GK 8GB
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内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
内存RAM