Samsung M391B5673EH1-CH9 2GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

17 12.8

测试中的平均数值
更快的写入速度，GB/s

12.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.8 17.0
写入速度，GB/s

9.0 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston 9905702-136.A00G 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Smart Modular SF4641G8CKHI6DFSEG 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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Mushkin 991988 (996988) 4GB

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Kingston XN205T-MIE2 16GB

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