Samsung M391B5673EH1-CH9 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

报告一个错误

更快的读取速度，GB/s

16.9 12.8

测试中的平均数值
更快的写入速度，GB/s

13.4 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

12.8 16.9
写入速度，GB/s

9.0 13.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3257

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV4GX3M1B1600C11 4GB

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Crucial Technology CT16G4SFD8266 16GB

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Mushkin 991988 (996988) 4GB

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Kingston 99U5428-046.A00LF 4GB

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G Skill Intl F4-3200C14-16GTZKW 16GB

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Samsung M471B5273DH0-CK0 4GB

Kingston ACR24D4U7D8MB-16 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Mushkin 99[2/7/4]190F 4GB