Samsung M391B5673EH1-CH9 2GB vs Corsair CMK64GX4M4C3000C15 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMK64GX4M4C3000C15 16GB

Corsair CMK64GX4M4C3000C15 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 33% 更低的延时

Corsair CMK64GX4M4C3000C15 16GB

需要考虑的原因
Corsair CMK64GX4M4C3000C15 16GB

报告一个错误

更快的读取速度，GB/s

14.7 12.8

测试中的平均数值
更快的写入速度，GB/s

14.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMK64GX4M4C3000C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 39
读取速度，GB/s

12.8 14.7
写入速度，GB/s

9.0 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3185

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMK64GX4M4C3000C15 16GB

Corsair CMK64GX4M4C3000C15 16GB

Kingston 99U5584-004.A00LF 4GB

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Nanya Technology NT8GA64D88AX3S-HR 8GB

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

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Samsung M471A1G44AB0-CWE 8GB

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Samsung M378A1G44BB0-CWE 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston HP37D4U1S8ME-8X 8GB

Kingston HP37D4U1S8ME-8X 8GB

Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB

SK Hynix HMT451S6AFR8A-PB 4GB

SK Hynix HMT451S6AFR8A-PB 4GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB