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Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB

Samsung M391B5673EH1-CH9 2GB vs Crucial Technology BLS16G4D240FSB.16FBR 16GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
Crucial Technology BLS16G4D240FSB.16FBR 16GB 需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FBR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    12.8 left arrow 17.0
  • 写入速度，GB/s
    9.0 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3120

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905713-001.A00G 4GB
Kingston 9905713-001.A00G 4GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9905402-015.A05LF 1GB
Kingston 9905402-015.A05LF 1GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMT32GX4M4C3600C18 8GB
Corsair CMT32GX4M4C3600C18 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CM4B8G2J3000K15K 8GB
Corsair CM4B8G2J3000K15K 8GB
内存RAM
Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
Kingston KHX3200C18D4/16G 16GB
Kingston KHX3200C18D4/16G 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMWX8GD3000C15W4 8GB
Corsair CMWX8GD3000C15W4 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM