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Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT8G4DFD8213.C16FAD1 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
29
左右 10% 更低的延时
需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
报告一个错误
更快的读取速度,GB/s
13.2
12.8
测试中的平均数值
更快的写入速度,GB/s
10.4
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
29
读取速度,GB/s
12.8
13.2
写入速度,GB/s
9.0
10.4
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
2595
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Kingston 99U5584-004.A00LF 4GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMK16GX4M2K4333C19 8GB
Kingston 9905403-038.A00G 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston 9905744-077.A00G 16GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3466C16-8GVR 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
A-DATA Technology AE4S240038G17-BHYA 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
V-Color Technology Inc. TC416G24D817 16GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C15-8GRB 8GB
报告一个错误
×
Bug description
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