Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3200C15-16GTZR 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

G Skill Intl F4-3200C15-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

17.2 12.8

测试中的平均数值
更快的写入速度，GB/s

15.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3200C15-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

12.8 17.2
写入速度，GB/s

9.0 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3614

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-2800C14-16GVK 16GB

G Skill Intl F4-2800C14-16GVK 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Ramsta Ramsta-2666MHz-4G 4GB

Ramsta Ramsta-2666MHz-4G 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston MSI24D4U7S8MB-8 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Apacer Technology 78.C2GFK.AR20B 8GB

Apacer Technology 78.C2GFK.AR20B 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Corsair CMK8GX4M2B3733C17 4GB

Corsair CMK8GX4M2B3733C17 4GB