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Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

Samsung M391B5673EH1-CH9 2GB vs GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.1 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    12.8 left arrow 19.1
  • 写入速度，GB/s
    9.0 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3786

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Corsair CMK16GX4M4B3866C18 4GB
Corsair CMK16GX4M4B3866C18 4GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Essencore Limited IM44GU48A30-FGGHAB 4GB
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Kingston 9905471-002.A00LF 2GB
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Kingston X3XCFP-HYA 8GB
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Kingston KHX2400C11D3/4GX 4GB
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DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
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G Skill Intl F3-1600C11-4GIS 4GB
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Kingston 8ATF1G64AZ-2G3A141 8GB
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Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2666C19-16GIS 16GB
G Skill Intl F4-2666C19-16GIS 16GB
内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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G Skill Intl F4-5066C20-8GVK 8GB
内存RAM
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Kingston 9905471-001.A01LF 2GB
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Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
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Samsung M4 70T2864QZ3-CF7 1GB
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Samsung M471A1G43EB1-CRC 8GB
内存RAM
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Kingston 9905702-010.A00G 8GB
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UMAX Technology D4-2133-4GB-512X8-L 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM