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Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Samsung M391B5673EH1-CH9 2GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 35% 更低的延时
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.4 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 40
  • 读取速度，GB/s
    12.8 left arrow 13.4
  • 写入速度，GB/s
    9.0 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2362

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
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Corsair CM4X8GD3000C16K4 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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A-DATA Technology DDR4 3200 8GB
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Kingston 9905469-143.A00LF 4GB
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Terabyte Co Ltd RCX2-16G3000R 8GB
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Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology BLS4G4D240FSA.8FBD 4GB
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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Corsair CMK256GX4M8A2400C16 32GB
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Kingston 9905630-031.A00G 16GB
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Ramos Technology EWB8GB681CA3-16IC 8GB
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Crucial Technology BL16G32C16U4WL.M16FE 16GB
内存RAM
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Corsair CMK16GX4M4B3333C16 4GB
内存RAM
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内存RAM
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Micron Technology 8JSF25664HZ-1G4D1 2GB
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Kingston KF3200C16D4/16GX 16GB
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Samsung M471B1G73DB0-YK0 8GB
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