Samsung M391B5673EH1-CH9 2GB vs Golden Empire CL16-18-18 D4-3200 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

Golden Empire CL16-18-18 D4-3200 8GB

需要考虑的原因
Golden Empire CL16-18-18 D4-3200 8GB

报告一个错误

更快的读取速度，GB/s

18.2 12.8

测试中的平均数值
更快的写入速度，GB/s

14.2 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Golden Empire CL16-18-18 D4-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.8 18.2
写入速度，GB/s

9.0 14.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3463

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Apacer Technology 78.DAGP2.4030B 16GB

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Corsair CMN32GX4M2Z3600C18 16GB

Kingston 99P5474-014.A00LF 4GB

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Corsair CMR32GX4M4C3000C15 8GB