Samsung M391B5673EH1-CH9 2GB vs Ramaxel Technology RMUA5110MB78HAF-2400 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

需要考虑的原因
Ramaxel Technology RMUA5110MB78HAF-2400 8GB

报告一个错误

更快的读取速度，GB/s

13.6 12.8

测试中的平均数值
更快的写入速度，GB/s

9.6 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

12.8 13.6
写入速度，GB/s

9.0 9.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD832A.C16FP 16GB

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL8G24C16U4B.8FD 8GB

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G Skill Intl F4-3200C16-16GTZKY 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G