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Samsung M391B5673EH1-CH9 2GB
Smart Modular SMU4TDC3C0K0464SCG 4GB

Samsung M391B5673EH1-CH9 2GB vs Smart Modular SMU4TDC3C0K0464SCG 4GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
Smart Modular SMU4TDC3C0K0464SCG 4GB 需要考虑的原因
Smart Modular SMU4TDC3C0K0464SCG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 26
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 22
  • 读取速度，GB/s
    12.8 left arrow 18.1
  • 写入速度，GB/s
    9.0 left arrow 12.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2580

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Smart Modular SMU4TDC3C0K0464SCG 4GB RAM的比较

G Skill Intl F4-3000C15-8GVKB 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hewlett-Packard 7EH61AA# 8GB
Hewlett-Packard 7EH61AA# 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK32GX4M2D3000C16 16GB
Corsair CMK32GX4M2D3000C16 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Corsair CMK8GX4M1D2666C16 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Corsair CMV16GX4M1A2133C15 16GB
Corsair CMV16GX4M1A2133C15 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Kingston HP32D4U8S8HD-8X 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX16GX4M2A3000C18 8GB
Corsair CMSX16GX4M2A3000C18 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM