RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
V-Color Technology Inc. TN48G26S819-SB 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs V-Color Technology Inc. TN48G26S819-SB 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
V-Color Technology Inc. TN48G26S819-SB 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
需要考虑的原因
V-Color Technology Inc. TN48G26S819-SB 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 -4% 更低的延时
更快的读取速度,GB/s
16.8
12.8
测试中的平均数值
更快的写入速度,GB/s
13.6
9.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
V-Color Technology Inc. TN48G26S819-SB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
25
读取速度,GB/s
12.8
16.8
写入速度,GB/s
9.0
13.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2143
2889
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
V-Color Technology Inc. TN48G26S819-SB 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD64GX4M4A2666C15 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMK64GX4M8X3600C18 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMK16GX4M4B3200C15 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston 9905702-184.A00G 8GB
Kingston 9905469-143.A00LF 4GB
Kingston 99P5723-006.A00G 8GB
Kingston HP698651-154-MCN 8GB
INTENSO 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CMK192GX4M12P3200C16 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
EVGA 16G-D4-2800-MR 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-4000C17-8GTRS 8GB
Kingston 99U5474-010.A00LF 2GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
报告一个错误
×
Bug description
Source link