Samsung M391B5673EH1-CH9 2GB vs V-GEN D4H16GS24A8 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

更快的写入速度，GB/s

9.0 7.3

测试中的平均数值

V-GEN D4H16GS24A8 16GB

需要考虑的原因
V-GEN D4H16GS24A8 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

14.5 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

V-GEN D4H16GS24A8 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.8 14.5
写入速度，GB/s

9.0 7.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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AMD AE34G2139U2 4GB

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PNY Electronics PNY 2GB

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Crucial Technology CT8G4SFD824AC16FBD1 8GB

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PUSKILL PJ16TFK1GM8 16GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

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