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Samsung M391B5673FH0-CH9 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB

Samsung M391B5673FH0-CH9 2GB vs A-DATA Technology AO1P24HC8T1-BSFS 8GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
A-DATA Technology AO1P24HC8T1-BSFS 8GB 需要考虑的原因
A-DATA Technology AO1P24HC8T1-BSFS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    13.3 left arrow 14.5
  • 写入速度，GB/s
    8.5 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 2383

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston HP32D4U8D8HC-16XR 16GB
Kingston HP32D4U8D8HC-16XR 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston KHX3200C16D4/16GX 16GB
Kingston KHX3200C16D4/16GX 16GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Nanya Technology M2X4G64CB88CHN-DG 4GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMW64GX4M4Z2933C16 16GB
Corsair CMW64GX4M4Z2933C16 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMW32GX4M4C3200C16 8GB
Corsair CMW32GX4M4C3200C16 8GB
内存RAM