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Samsung M393A2G40DB1-CRC 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Samsung M393A2G40DB1-CRC 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

总分
star star star star star
Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

差异 规格 评论

差异

Samsung M393A2G40DB1-CRC 16GB 需要考虑的原因
Samsung M393A2G40DB1-CRC 16GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 81
    左右 -131% 更低的延时
  • 更快的读取速度，GB/s
    10.2 left arrow 8.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.4 left arrow 5.6
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393A2G40DB1-CRC 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    81 left arrow 35
  • 读取速度，GB/s
    8.5 left arrow 10.2
  • 写入速度，GB/s
    5.6 left arrow 7.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1651 left arrow 2124

Samsung M393A2G40DB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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