Samsung M393B1G70BH0-CK0 8GB vs Corsair CMD16GX4M2B2400C10 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Corsair CMD16GX4M2B2400C10 8GB

需要考虑的原因
Corsair CMD16GX4M2B2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 51

左右 -89% 更低的延时
更快的读取速度，GB/s

18.2 9.8

测试中的平均数值
更快的写入速度，GB/s

14.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Corsair CMD16GX4M2B2400C10 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 27
读取速度，GB/s

9.8 18.2
写入速度，GB/s

8.1 14.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 3538

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4JTF12864AZ-1G4D1 1GB

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Crucial Technology BL16G30C15U4W.M16FE1 16GB

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Kingston 9905702-019.A00G 8GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston KHX3466C19D4/8G 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB