Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLS4G4D240FSA.8FARG 4GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Crucial Technology BLS4G4D240FSA.8FARG 4GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Crucial Technology BLS4G4D240FSA.8FARG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FARG 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 -70% 更低的延时
更快的读取速度，GB/s

16.3 9.8

测试中的平均数值
更快的写入速度，GB/s

12.4 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 30
读取速度，GB/s

9.8 16.3
写入速度，GB/s

8.1 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Samsung M393B1G70BH0-CK0 8GB

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Crucial Technology BLS4G4D240FSA.8FARG 4GB

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A-DATA Technology DOVF1B163G2G 2GB

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G Skill Intl F4-3200C14-8GTZSK 8GB

G Skill Intl F4-3200C14-8GTZSK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M378A5143EB1-CPB 4GB

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Hewlett-Packard 7EH64AA# 8GB

Hewlett-Packard 7EH64AA# 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Super Talent F24SB8GH 8GB

Super Talent F24SB8GH 8GB