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Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB

Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLS4G4D240FSC.8FBD 4GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSC.8FBD 4GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Crucial Technology BLS4G4D240FSC.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSC.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 51
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 31
  • 读取速度，GB/s
    9.8 left arrow 17.4
  • 写入速度，GB/s
    8.1 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2994

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-050.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
内存RAM
G Skill Intl F2-9600CL6-2GBRH 2GB
G Skill Intl F2-9600CL6-2GBRH 2GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905630-051.A00G 16GB
Kingston 9905630-051.A00G 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905678-012.A00G 8GB
Kingston 9905678-012.A00G 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3300C16-8GTZKW 8GB
G Skill Intl F4-3300C16-8GTZKW 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMW64GX4M8Z2933C16 8GB
Corsair CMW64GX4M8Z2933C16 8GB
内存RAM
Kingston 16KTF1G64HZ-1G6E1 8GB
Kingston 16KTF1G64HZ-1G6E1 8GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMR32GX4M4C3466C16 8GB
Corsair CMR32GX4M4C3466C16 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
内存RAM