Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLT4G4D30AETA.K8FD 4GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

51 59

左右 14% 更低的延时

Crucial Technology BLT4G4D30AETA.K8FD 4GB

需要考虑的原因
Crucial Technology BLT4G4D30AETA.K8FD 4GB

报告一个错误

更快的读取速度，GB/s

17.9 9.8

测试中的平均数值
更快的写入速度，GB/s

9.0 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 59
读取速度，GB/s

9.8 17.9
写入速度，GB/s

8.1 9.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 1968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMD8GX4M2B3200C16 4GB

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Samsung M393A1G40DB0-CPB 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Corsair CMW32GX4M2Z3600C18 16GB

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AMD R748G2606U2S 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology BL32G32C16U4W.M16FB1 32GB

Crucial Technology BL32G32C16U4W.M16FB1 32GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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AMD R744G2400U1S 4GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMW8GX4M1Z3200C16 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMW128GX4M4D3000C16 32GB

Corsair CMW128GX4M4D3000C16 32GB