Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-3600C17-8GVK 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

G Skill Intl F4-3600C17-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 51

左右 -76% 更低的延时
更快的读取速度，GB/s

18.1 9.8

测试中的平均数值
更快的写入速度，GB/s

13.3 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3600C17-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 29
读取速度，GB/s

9.8 18.1
写入速度，GB/s

8.1 13.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 3299

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Kingston K531R8-MIN 4GB

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Kingston MSI24D4S7D8MHMH6 16GB

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A-DATA Technology VDQVE1B16 2GB

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Essencore Limited IM44GU48N26-FFFHM 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston KST-2133MHZ-4G 4GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

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Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

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SK Hynix HMT351R7EFR8C-RD 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

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G Skill Intl F4-3333C16-8GTZB 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB