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Samsung M393B1G70BH0-CK0 8GB
Kingston XF875V-MIH 8GB

Samsung M393B1G70BH0-CK0 8GB vs Kingston XF875V-MIH 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Kingston XF875V-MIH 8GB

Kingston XF875V-MIH 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Kingston XF875V-MIH 8GB 需要考虑的原因
Kingston XF875V-MIH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 51
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Kingston XF875V-MIH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 34
  • 读取速度，GB/s
    9.8 left arrow 14.8
  • 写入速度，GB/s
    8.1 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2785

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Kingston XF875V-MIH 8GB RAM的比较

Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-3600C16-16GTRSC 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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Transcend Information JM3200HLB-8G 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Mushkin MR[A/B]4U320LLLM8G 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905665-023.A00G 4GB
Kingston 9905665-023.A00G 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW32GX4M4C3466C16 8GB
Corsair CMW32GX4M4C3466C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston 9905701-098.A00G 16GB
Kingston 9905701-098.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston HP26D4S9D8MJ-16 16GB
Kingston HP26D4S9D8MJ-16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Mushkin MRA4S300GJJM16G 16GB
Mushkin MRA4S300GJJM16G 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
内存RAM