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Samsung M393B1G70BH0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
比较
Samsung M393B1G70BH0-CK0 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
总分
Samsung M393B1G70BH0-CK0 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
低于PassMark测试中的延时,ns
51
56
左右 9% 更低的延时
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
更快的读取速度,GB/s
20.1
9.8
测试中的平均数值
更快的写入速度,GB/s
10.5
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
51
56
读取速度,GB/s
9.8
20.1
写入速度,GB/s
8.1
10.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2208
2455
Samsung M393B1G70BH0-CK0 8GB RAM的比较
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KF3200C20S4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905702-121.A00G 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
Samsung M393B1G70BH0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M393B1K70QB0-CK0 8GB
Corsair CMD32GX4M4B3000C15 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK32GX4M2A2133C13 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMK16GX4M2A2133C13 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15-4GRR 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
报告一个错误
×
Bug description
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